Olof Kordina

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Carl Hemmingsson, Nguyên Tiên Són, Olof Kordina et al. · Journal of Applied Physics · 1997 · 317 citations

Semiconductors, Semiconductor Technology, Engineering +12

Silicon vacancy related defect in 4H and 6H SiC

E. Sörman, Nguyên Tiên Són, Weimin Chen et al. · Physical review. B, Condensed matter · 2000 · 250 citations

Ii-vi Semiconductor, Triplet States, Engineering +12

High temperature chemical vapor deposition of SiC

Olof Kordina, C. Hallin, A. Ellison et al. · Applied Physics Letters · 1996 · 127 citations

Materials Engineering, Semiconductors, Materials Science +11

Growth of SiC by ?Hot-Wall? CVD and HTCVD

Olof Kordina, C. Hallin, Anne Henry et al. · physica status solidi (b) · 1997 · 127 citations

Engineering, Reactor Concept, Semiconductors +16

Progress in SiC: from material growth to commercial device development

C.H. Carter, V. F. Tsvetkov, R Glass et al. · Materials Science and Engineering B · 1999 · 126 citations

Materials Engineering, Materials Science, Engineering +4