V. F. Tsvetkov - Concepedia

Author

V. F. Tsvetkov

Also Known As

V F Tsvetkov, V. F. Tsvetkov, V. Tsvetkov, V.F Tsvetkov, V.F. Tsvetkov, VALERI TSVETKOV, Valeri F. Tsvetkov, Valeri Tsvetkov

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

Cree (China)Wolfspeed, Inc. (United States)Saint Petersburg State Electrotechnical University Sofia University "St. Kliment Ohridski"Stony Brook University

About

V. F. Tsvetkov is an author at Cree (China) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	41	2.6K
2	Applied Physics	24	36	2.1K
3	Electrical Engineering	11	11	412
4	Chemistry	1	1	121
5	Industrial Engineering	1	1	120

V. F. Tsvetkov

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
Investigation of growth processes of ingots of silicon carbide single crystals Yu. M. Tairov, V. F. Tsvetkov Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyApplied Physics	1978	563
General principles of growing large-size single crystals of various silicon carbide polytypes Yu. M. Tairov, V. F. Tsvetkov Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal MaterialCrystal Growth Technology	1981	242
Progress in SiC: from material growth to commercial device development C.H. Carter, V. F. Tsvetkov, R Glass, Materials Science and Engineering B Materials EngineeringMaterials ScienceEngineeringCommercial Device DevelopmentCarbide	1999	126
Progress in controlling the growth of polytypic crystals Yuri M. Tairov, V. F. Tsvetkov Progress in Crystal Growth and Characterization Materials ScienceEngineeringCrystal MaterialPolytypic CrystalsCrystal Growth Technology	1983	121
The status of SiC bulk growth from an industrial point of view St.G. Müller, R Glass, H. McD. Hobgood, Journal of Crystal Growth Materials ScienceMaterials EngineeringSic Bulk GrowthEngineeringIndustrial Engineering	2000	120
SiC Seeded Crystal Growth R Glass, D. Henshall, V. F. Tsvetkov, physica status solidi (b) EngineeringCrystal Growth TechnologyWafer Scale ProcessingMaterials FabricationMicrostructure-strength Relationship	1997	116
White-beam synchrotron topographic studies of defects in 6H-SiC single crystals Michael Dudley, Shaoping Wang, Wei Huang, Journal of Physics D Applied Physics Engineering6H-sic Single CrystalsDefect ToleranceMicrostructure-strength RelationshipFormer Dislocations	1995	109
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications H. McD. Hobgood, M.F. Brady, W.H. Brixius, Materials science forum Materials ScienceEngineeringCrystal Growth TechnologyApplied PhysicsMolecular Beam Epitaxy	2000	87
Structural macro-defects in 6H-SiC wafers R Glass, Lars Kjellberg, V. F. Tsvetkov, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringStructural Macro-defectsDefect Formation	1993	76
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method Jason R. Jenny, St.G. Müller, A. Powell, Journal of Electronic Materials Materials ScienceMaterials EngineeringEngineeringSeeded-sublimation MethodApplied Physics	2002	75

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