St.G. Müller - Concepedia

Author

St.G. Müller

Wolfspeed, Inc. (United States)

Also Known As

St G. Müller, St. G. Müller, St.G Müller, St.G. Muller, St.G. Müller

Publications

787

Citations

H-Index

Concepts

All Affiliations

Wolfspeed, Inc. (United States)Friedrich-Alexander-Universität Erlangen-Nürnberg Cree (China)

About

St.G. Müller is an author at Wolfspeed, Inc. (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	720
2	Applied Physics	10	10	458
3	Materials Engineering	7	7	509
4	Electrical Engineering	3	3	120
5	Industrial Engineering	1	1	120

St.G. Müller

Publications

744

Citations

H-Index

Page 1

	Year	Citations
Progress in SiC: from material growth to commercial device development C.H. Carter, V. F. Tsvetkov, R Glass, Materials Science and Engineering B Materials EngineeringMaterials ScienceEngineeringCommercial Device DevelopmentCarbide	1999	126
The status of SiC bulk growth from an industrial point of view St.G. Müller, R Glass, H. McD. Hobgood, Journal of Crystal Growth Materials ScienceMaterials EngineeringSic Bulk GrowthEngineeringIndustrial Engineering	2000	120
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method Jason R. Jenny, St.G. Müller, A. Powell, Journal of Electronic Materials Materials ScienceMaterials EngineeringEngineeringSeeded-sublimation MethodApplied Physics	2002	75
Dislocation Content of Micropipes in SiC J. Heindl, W. Dorsch, H. P. Strunk, Physical Review Letters EngineeringSevere Plastic DeformationMechanical EngineeringSilicon CarbideCeramic Matrix Composite	1998	72
Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation Dieter Hofmann, Matthias Bickermann, R. Eckstein, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringMicrostructureCrystal Growth Technology	1999	71
SiC-bulk growth by physical-vapor transport and its global modelling Dieter Hofmann, R. Eckstein, M. Kölbl, Journal of Crystal Growth EngineeringPhysicsApplied PhysicsMaterial ModelingTransport Phenomena	1997	68
High-purity semi-insulating 4H-SiC for microwave device applications Jason R. Jenny, D.P. Malta, St.G. Müller, Journal of Electronic Materials Electrical EngineeringEngineeringApplied PhysicsCarbideMicrowave Device Applications	2003	54
Progress in the industrial production of SiC substrates for semiconductor devices St.G. Müller, R Glass, H. McD. Hobgood, Materials Science and Engineering B Materials ScienceSemiconductor DevicesElectrical EngineeringEngineeringPower Device	2001	45
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications St.G. Müller, Edward Sanchez, David M. Hansen, Journal of Crystal Growth Materials EngineeringSemiconductor TechnologyHigh Quality SicEngineeringVolume Production	2011	29
Defects in SiC substrates and epitaxial layers affecting semiconductor device performance St.G. Müller, Joseph J. Sumakeris, M.F. Brady, The European Physical Journal Applied Physics	2004	24

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