A. Ellison - Concepedia

Author

A. Ellison

Linköping University

Also Known As

A Ellison, A. Ellison, A. H. Ellison, A.H. Ellison, Alex Ellison

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Linköping University ABB (Sweden)Okmetic (Finland)Outokumpu (Sweden)KTH Royal Institute of Technology

About

A. Ellison is an author at Linköping University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	21	1.5K
2	Applied Physics	16	18	1.4K
3	Chemistry	3	3	410
4	Natural Sciences	2	2	387
5	Chemical Engineering	1	1	23

A. Ellison

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Infrared Spectra of Monolayers on Metal Mirrors S. A. Francis, A. Ellison Journal of the Optical Society of America Optical MaterialsEngineeringChemistryMetal MirrorsSpectroscopic Property	1959	343
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes Q. Wahab, A. Ellison, Anne Henry, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringEpitaxial GrowthEngineeringSubstrate-induced Defects	2000	169
High temperature chemical vapor deposition of SiC Olof Kordina, C. Hallin, A. Ellison, Applied Physics Letters Materials EngineeringSemiconductorsMaterials ScienceElectronic DevicesEngineering	1996	127
Growth of SiC by ?Hot-Wall? CVD and HTCVD Olof Kordina, C. Hallin, Anne Henry, physica status solidi (b) EngineeringReactor ConceptSemiconductorsHtcvd TechniqueMolecular Beam Epitaxy	1997	127
In situ substrate preparation for high-quality SiC chemical vapour deposition C. Hallin, Fredrik Owman, Per Mårtensson, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringSitu Substrate PreparationSurface Science	1997	117
Dislocation evolution in 4H-SiC epitaxial layers H. Jacobson, Jens Birch, Rositsa Yakimova, Journal of Applied Physics Materials ScienceSemiconductors4H-sic Commercial WafersLattice Plane MisorientationEdge Dislocations	2002	101
High temperature CVD growth of SiC A. Ellison, J. Zhang, Jeffrey M. Peterson, Materials Science and Engineering B Materials EngineeringEngineeringApplied PhysicsChemical Vapor DepositionCarbide	1999	87
A 3 kV Schottky barrier diode in 4H-SiC Q. Wahab, T. Kimoto, A. Ellison, Applied Physics Letters SemiconductorsMetal OverlapElectrical EngineeringElectronic DevicesEngineering	1998	76
Epitaxial growth of SiC in a chimney CVD reactor A. Ellison, J. Zhang, Anne Henry, Journal of Crystal Growth Materials EngineeringChimney Cvd ReactorEngineeringApplied PhysicsCarbide	2002	49
HTCVD growth of semi-insulating 4H-SiC crystals with low defect density A. Ellison, Björn Magnusson, Carl Hemmingsson, MRS Proceedings Materials ScienceEngineeringApplied PhysicsSemiconductor MaterialDefect Formation	2000	47

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