In situ substrate preparation for high-quality SiC chemical vapour deposition

General principles of growing large-size single crystals of various silicon carbide polytypes

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1981 · 243 citations

Natural Sciences, Materials Engineering, Materials Science +16

Inter-layer interactions and the origin of SiC polytypes

R. J. Needs, Volker Heine · Journal of Physics C Solid State Physics · 1988 · 199 citations

Natural Sciences, Materials Science, Physics +12

6H-silicon carbide devices and applications

John W. Palmour, J. A. Edmond, Hoyoul Kong et al. · Physica B Condensed Matter · 1993 · 186 citations

Engineering, Materials Engineering, Materials Science +12

Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy

Koji Maeda, K. Suzuki, Satoshi Fujita et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1988 · 164 citations

Natural Sciences, Materials Engineering, Materials Science +17

Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane

Jun Takahashi, Masatoshi Kanaya, Yuichiro Fujiwara · Journal of Crystal Growth · 1994 · 152 citations

Engineering, Materials Engineering, Materials Science +16