Per Mårtensson

Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy

Per Mårtensson, R. M. Feenstra · Physical review. B, Condensed matter · 1989 · 238 citations

Materials Science, Ii-vi Semiconductor, Engineering +11

Fermi-Level Pinning at the Sb/GaAs(110) Surface Studied by Scanning Tunneling Spectroscopy

R. M. Feenstra, Per Mårtensson · Physical Review Letters · 1988 · 206 citations

Materials Science, Ii-vi Semiconductor, Surface Characterization +14

High-resolution core-level study of 6<i>H</i>-SiC(0001)

L. I. Johansson, Fredrik Owman, Per Mårtensson · Physical review. B, Condensed matter · 1996 · 195 citations

Materials Science, Surface Characterization, Optical Materials +15

Surface-state band structure of the Si(100)2×1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces

L. S. O. Johansson, R. I. G. Uhrberg, Per Mårtensson et al. · Physical review. B, Condensed matter · 1990 · 178 citations

Engineering, Chemistry, Silicon On Insulator +17

STM study of the SiC(0001) √3 × √3 surface

Fredrik Owman, Per Mårtensson · Surface Science · 1995 · 134 citations

Engineering, Physics, Surface Analysis +4