Q. Wahab

Ionization rates and critical fields in 4H silicon carbide

Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 398 citations

Engineering, Electrical Engineering, Materials Science +15

Silicon carbide and diamond for high temperature device applications

M. Willander, M. Friesel, Q. Wahab et al. · Journal of Materials Science Materials in Electronics · 2005 · 286 citations

Engineering, Materials Engineering, Materials Science +14

High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

K.-C. Chang, Noel T. Nuhfer, Lisa M. Porter et al. · Applied Physics Letters · 2000 · 210 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Q. Wahab, A. Ellison, Anne Henry et al. · Applied Physics Letters · 2000 · 170 citations

Engineering, Electrical Engineering, Materials Science +17

Study of avalanche breakdown and impact ionization in 4H silicon carbide

Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Journal of Electronic Materials · 1998 · 96 citations

Engineering, Electrical Engineering, Materials Science +15