K.-C. Chang

High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

K.-C. Chang, Noel T. Nuhfer, Lisa M. Porter et al. · Applied Physics Letters · 2000 · 209 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +10

High-resolution elemental profiles of the silicon dioxide∕4H-silicon carbide interface

K.-C. Chang, Yan Cao, Lisa M. Porter et al. · Journal of Applied Physics · 2005 · 49 citations

Materials Science, Engineering, Crystalline Defects +10

Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors

K.-C. Chang, Lisa M. Porter, J. Bentley et al. · Journal of Applied Physics · 2004 · 47 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Nitridation anisotropy in SiO2∕4H–SiC

Sarit Dhar, L. C. Feldman, K.-C. Chang et al. · Journal of Applied Physics · 2005 · 39 citations

Materials Science, Engineering, Crystal Growth Technology +15

Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

K.-C. Chang, J. Bentley, Lisa M. Porter · Journal of Electronic Materials · 2003 · 16 citations

Materials Science, Engineering, Nanotechnology +8