Nitridation anisotropy in SiO2∕4H–SiC

Abstract

Nitrogen incorporation at the SiO2∕SiC interface due to annealing in NO is measured and shown to be a strong function of crystal face. The annealing process involves two major solid-state chemical reactions: nitrogen uptake at the interface and N loss associated with second-order oxidation. An ad hoc kinetics model explains the experimental observations of anisotropy and nitrogen saturation.