John R. Williams

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 628 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +9

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 429 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Multiphase lattice Boltzmann simulations for porous media applications

Haihu Liu, Qinjun Kang, Christopher Leonardi et al. · Computational Geosciences · 2015 · 429 citations · Full text

Engineering, Fluid Mechanics, Particle Method +16

Modified Deal Grove model for the thermal oxidation of silicon carbide

Yongwook Song, Sarit Dhar, L. C. Feldman et al. · Journal of Applied Physics · 2004 · 256 citations

Materials Science, Chemical Engineering, Engineering +12

High-temperature ohmic contact to <i>n</i>-type 6H-SiC using nickel

J. Crofton, P.G. McMullin, John R. Williams et al. · Journal of Applied Physics · 1995 · 194 citations

Materials Engineering, Materials Science, Electrical Engineering +15