John R. Williams

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 633 citations

Engineering, Electrical Engineering, Materials Science +17

Multiphase lattice Boltzmann simulations for porous media applications

Haihu Liu, Qinjun Kang, Christopher Leonardi et al. · Computational Geosciences · 2015 · 451 citations · Full text

Engineering, Computational Engineering, Petroleum Engineering +17

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 434 citations

Engineering, Materials Engineering, Materials Science +17

Modified Deal Grove model for the thermal oxidation of silicon carbide

Yongwook Song, Sarit Dhar, L. C. Feldman et al. · Journal of Applied Physics · 2004 · 259 citations

Engineering, Materials Engineering, Materials Science +17

A direct simulation method for particle‐fluid systems

Benjamin K. Cook, David R. Noble, John R. Williams · Engineering Computations · 2004 · 197 citations

Engineering, Materials Engineering, Mechanical Engineering +16