Modified Deal Grove model for the thermal oxidation of silicon carbide

Abstract

A modified Deal Grove model for the oxidation of 4H-SiC is presented, which includes the removal of the carbon species. The model is applied to data on the oxidation rates for the (0001) Si, (0001̄) C, and (112̄0) a faces, which are performed in 1 atm dry oxygen and in the temperature range 950–1150 °C. Analysis within the model provides a physical explanation for the large crystal-face dependent oxidation rates observed.