Silicon Carbide

Silicon Carbide is a wide-bandgap semiconductor material characterized by its hexagonal crystal structure and superior electrical, thermal, and mechanical properties compared to conventional semiconductors, enabling high-power, high-temperature, and high-frequency electronic device applications.

18.3K

Publications

798K

Citations

44.6K

Authors

5.1K

Institutions

Publications per year

2017–2026

4.6K

Authors

44.6K

  1. TK
    Tsunenobu Kimoto

    Kyoto University, Japan

    165 publications · 10.3K citations

    52

    h-index

  2. EJ
    Erik Janzén

    Linköping University, Sweden

    165 publications · 8.1K citations

    47

    h-index

  3. JW
    John W. Palmour

    Wolfspeed, Inc. (United States), United States

    130 publications · 7.6K citations

    44

    h-index

  4. YK
    Young‐Wook Kim

    University of Seoul, South Korea

    101 publications · 5K citations

    43

    h-index

  5. YK
    Yutai Katoh

    Oak Ridge National Laboratory, United States

    83 publications · 7.5K citations

    42

    h-index

1–5 of 44.6K

Venues

  1. Journal of the American Ceramic Society

    742 publications · 40.5K citations

    100

    h-index

  2. Applied Physics Letters

    724 publications · 38.2K citations

    92

    h-index

  3. Journal of Applied Physics

    683 publications · 35.2K citations

    88

    h-index

  4. Journal of the European Ceramic Society

    519 publications · 24.2K citations

    77

    h-index

  5. IEEE Transactions on Power Electronics

    186 publications · 16.1K citations

    69

    h-index

1–5