E. Sörman

Silicon vacancy related defect in 4H and 6H SiC

E. Sörman, Nguyên Tiên Són, Weimin Chen et al. · Physical review. B, Condensed matter · 2000 · 258 citations

Engineering, Materials Engineering, Materials Science +17

Determination of the electron effective-mass tensor in 4<i>H</i>SiC

D. Volm, B. K. Meyer, D.M. Hofmann et al. · Physical review. B, Condensed matter · 1996 · 89 citations

Natural Sciences, Physics, Condensed Matter Physics +6

Electron effective masses and mobilities in high-purity 6H–SiC chemical vapor deposition layers

Nguyên Tiên Són, Olof Kordina, Andrey O. Konstantinov et al. · Applied Physics Letters · 1994 · 79 citations

Natural Sciences, Materials Science, Physics +17

Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers

Nguyên Tiên Són, E. Sörman, Weimin Chen et al. · Physical review. B, Condensed matter · 1997 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

Origin of <i>n</i>-type conductivity of low-temperature grown InP

Weimin Chen, P. Dreszer, Amrita Prasad et al. · Journal of Applied Physics · 1994 · 36 citations

Natural Sciences, Materials Science, Physics +13