D.M. Hofmann - Concepedia

Author

D.M. Hofmann

Technical University of Munich

Also Known As

D M Hofmann, D. Hofmann, D. M. HOFMANN, D. M. Hofmann, D. M. Hofmann D. M. Hofmann, D.M Hofmann, D.M. Hofmann

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

Technical University of Munich University of Freiburg Technische Universität Berlin Lund University Justus-Liebig-Universität Gießen

About

D.M. Hofmann is an author at Technical University of Munich specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	26	1.9K
2	Applied Physics	20	25	1.9K
3	Natural Sciences	9	9	522
4	Electrical Engineering	7	7	749
5	Chemistry	6	6	598

D.M. Hofmann

Publications

Citations

H-Index

Page 1

	Year	Citations
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)2 core-shell structure Huijuan Zhou, H. Alves, D.M. Hofmann, Applied Physics Letters EngineeringExcitonic TransitionColloidal NanocrystalsChemistryWeak Excitonic Emission	2002	316
Properties of the yellow luminescence in undoped GaN epitaxial layers D.M. Hofmann, D. Kovalev, G. Steude, Physical review. B, Condensed matter Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceDeep DonorsYellow Luminescence	1995	231
Modified compensation model of CdTe M. Fiederle, C. Eiche, M. Salk, Journal of Applied Physics SemiconductorsIi-vi SemiconductorElectrical EngineeringEngineeringSpecific Resistance	1998	201
Identification of the chlorine<i>A</i>center in CdTe D.M. Hofmann, P. Omling, H. G. Grimmeiss, Physical review. B, Condensed matter Crystal StructureEngineeringChemistryQuantum MaterialsStructure Determination	1992	198
Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN M. Drechsler, D.M. Hofmann, Bernhard Meyer, Japanese Journal of Applied Physics Hexagonal GanWide-bandgap SemiconductorElectrical EngineeringEngineeringBand Edge Mass	1995	168
Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors M. Fiederle, D. Ebling, C. Eiche, Journal of Crystal Growth X-ray CrystallographyMaterials ScienceX-ray SpectroscopyCdte0.9se0.1 CrystalsCrystalline Defects	1994	94
Determination of the electron effective-mass tensor in 4<i>H</i>SiC D. Volm, B. K. Meyer, D.M. Hofmann, Physical review. B, Condensed matter Electrical EngineeringEngineeringPhysicsElectron SpectroscopyNatural Sciences	1996	88
Characterization of CuIn(Ga)Se2 Thin Films Mt. Wagner, D.M. Hofmann, I. Dirnstorfer, physica status solidi (a) Materials ScienceSemiconductorsFree-exciton TransitionIi-vi SemiconductorEngineering	1998	73
Defects in CdTe and Cd1−Zn Te D.M. Hofmann, Wolfgang Stadler, P. Christmann, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment	1996	73
Defects in porous silicon investigated by optically detected and by electron paramagnetic resonance techniques B. K. Meyer, D.M. Hofmann, Wolfgang Stadler, Applied Physics Letters Optical MaterialsEngineeringMagnetic ResonanceOptoelectronic DevicesIntegrated Circuits	1993	63

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