D.M. Hofmann

Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)2 core-shell structure

Huijuan Zhou, H. Alves, D.M. Hofmann et al. · Applied Physics Letters · 2002 · 316 citations

Engineering, Excitonic Transition, Colloidal Nanocrystals +21

Properties of the yellow luminescence in undoped GaN epitaxial layers

D.M. Hofmann, D. Kovalev, G. Steude et al. · Physical review. B, Condensed matter · 1995 · 231 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +12

Modified compensation model of CdTe

M. Fiederle, C. Eiche, M. Salk et al. · Journal of Applied Physics · 1998 · 201 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +13

Identification of the chlorine<i>A</i>center in CdTe

D.M. Hofmann, P. Omling, H. G. Grimmeiss et al. · Physical review. B, Condensed matter · 1992 · 198 citations

Crystal Structure, Engineering, Chemistry +18

Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

M. Drechsler, D.M. Hofmann, Bernhard Meyer et al. · Japanese Journal of Applied Physics · 1995 · 168 citations

Hexagonal Gan, Wide-bandgap Semiconductor, Electrical Engineering +9