Japanese Journal of Applied Physics · 1995 · 171 citations · 6 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCarrier TransportIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsConduction BandElectron Transport In SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsMetalorganic Vapor Phase EpitaxyPolaron Theory
The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m p * = 0.22±0.005 m o . Taking polaron effects into account the band edge mass is m b * = 0.20±0.005 m o . From the resonance linewidth a mobility of 3500 cm 2 /V·s at 6 K is obtained.
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Shallow donors in GaN—The binding energy and the electron effective mass
B. K. Meyer, D. Volm, A. Graber et al. · Solid State Communications · 1995 · 163 citations