Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

Abstract

The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m p * = 0.22±0.005 m o . Taking polaron effects into account the band edge mass is m b * = 0.20±0.005 m o . From the resonance linewidth a mobility of 3500 cm 2 /V·s at 6 K is obtained.