H. G. Grimmeiss - Concepedia

Author

H. G. Grimmeiss

Also Known As

Blaser, Gremmelrnaier, Grimmeiss, H, H G Grimmeiss, H Grimmeiss, H. G. GRIMMEISS, H. G. Grimmeiss, H. Grimmeiss, H.-G Grimmeiss, H.G Grimmeiss

254

Publications

4.8K

Citations

H-Index

Concepts

All Affiliations

Lund University Daimler (Germany)

About

H. G. Grimmeiss is an author at Lund University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	33	84	3.7K
2	Applied Physics	32	85	3.6K
3	Electrical Engineering	23	35	1.4K
4	Natural Sciences	15	26	1.5K
5	Chemistry	15	19	939

H. G. Grimmeiss

Publications

3.9K

Citations

H-Index

Page 1

	Year	Citations
High-resolution studies of sulfur- and selenium-related donor centers in silicon Erik Janzén, R. Stedman, G. Grossmann, Physical review. B, Condensed matter EngineeringChemistrySilicon On InsulatorElectronic Excited StateSpectroscopic Property	1984	252
Complex nature of gold-related deep levels in silicon D. V. Lang, H. G. Grimmeiss, Evert Jan Meijer, Physical review. B, Condensed matter EngineeringGold-acceptor LevelIntegrated CircuitsSilicon On InsulatorSemiconductors	1980	235
Identification of the chlorine<i>A</i>center in CdTe D.M. Hofmann, P. Omling, H. G. Grimmeiss, Physical review. B, Condensed matter Crystal StructureEngineeringChemistryQuantum MaterialsStructure Determination	1992	198
Deep Level Impurities in Semiconductors H. G. Grimmeiss Annual Review of Materials Science Additive Manufacturing TechniquesEngineeringMechanical EngineeringSemiconductorsMetallic Materials	1977	195
Spectral distribution of photoionization cross sections by photoconductivity measurements H. G. Grimmeiss, L. Ledebo Journal of Applied Physics Photoionization Cross SectionsElectrical EngineeringPhotoluminescenceEngineeringPhotoelectric Sensor	1975	145
Ultrathin Si<sub>m</sub>Ge<sub>n</sub>strained layer superlattices-a step towards Si optoelectronics H. Presting, H. Kibbel, M. Jaroš, Semiconductor Science and Technology Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1992	144
Deep sulfur-related centers in silicon H. G. Grimmeiss, Erik Janzén, B. Skarstam Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1980	99
Electronic properties of selenium-doped silicon H. G. Grimmeiss, Erik Janzén, B. Skarstam Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyElectronic DevicesEngineering	1980	96
Electrical and optical properties of deep levels in MOVPE grown GaAs Lars Samuelson, P.Omling'H. Titze, H. G. Grimmeiss Journal of Crystal Growth Ii-vi SemiconductorElectrical EngineeringOptical MaterialsMovpe Grown GaasDeep Levels	1981	95
Fundamentals of junction measurements in the study of deep energy levels in semiconductors H. G. Grimmeiss, C. Ovrén Journal of Physics E Scientific Instruments Wide-bandgap SemiconductorEngineeringJunction MeasurementsSemiconductor DeviceCapture Cross Sections	1981	95

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