L. Ledebo - Concepedia

Author

L. Ledebo

Lund University

Also Known As

L -A Ledebo, L-Å. Ledebo, L. -Å. Ledebo, L. Ledebo, L. Å. Ledebo, L.-A. Ledebo, L.-Å. Ledebo

Publications

898

Citations

H-Index

Concepts

All Affiliations

Lund University Magle (Sweden)

About

L. Ledebo is an author at Lund University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	16	858
2	Applied Physics	15	16	858
3	Natural Sciences	2	2	171
4	Education	1	1	26
5	Biostatistics	1	1	26

L. Ledebo

Publications

858

Citations

H-Index

Page 1

	Year	Citations
Spectral distribution of photoionization cross sections by photoconductivity measurements H. G. Grimmeiss, L. Ledebo Journal of Applied Physics Photoionization Cross SectionsElectrical EngineeringPhotoluminescenceEngineeringPhotoelectric Sensor	1975	145
On the position of energy levels related to transition-metal impurities in III-V semiconductors L. Ledebo, B. K. Ridley Journal of Physics C Solid State Physics Wide-bandgap SemiconductorEngineeringSemiconductor DeviceSemiconductorsDeep Level Link	1982	95
Photo-ionization of deep impurity levels in semiconductors with non-parabolic bands H. G. Grimmeiss, L. Ledebo Journal of Physics C Solid State Physics SemiconductorsIi-vi SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1975	85
Copper-related deep level defects in III–V semiconductors N. Kullendorff, L Jansson, L. Ledebo Journal of Applied Physics SemiconductorsPhotoionization Cross SectionsElectrical EngineeringWide-bandgap SemiconductorEngineering	1983	84
Electrical properties of Fe in GaAs M. Kleverman, P. Omling, L. Ledebo, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1983	79
Evidence that the gold donor and acceptor in silicon are two levels of the same defect L. Ledebo, Zhanguo Wang Applied Physics Letters Optical MaterialsPhotocapacitance MethodEngineeringSingle DefectExcitation Energy Transfer	1983	65
Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs Zhanguo Wang, L. Ledebo, H. G. Grimmeiss Journal of Physics C Solid State Physics Wide-bandgap SemiconductorEngineeringElectronic PropertiesSemiconductorsIi-vi Semiconductor	1984	47
Dynamics of capture from free-carrier tails in depletion regions and its consequences in junction experiments Evert Jan Meijer, H. G. Grimmeiss, L. Ledebo Journal of Applied Physics Electrical EngineeringEngineeringCapture Free CarriersPhysicsDepletion Regions	1984	46
Capture from free-carrier tails in the depletion region of junction barriers H. G. Grimmeiss, L. Ledebo, Evert Jan Meijer Applied Physics Letters Device ModelingElectrical EngineeringEngineeringPhysicsDepletion Region	1980	43
Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy W. Seifert, Jordina Fornell, L. Ledebo, Applied Physics Letters Materials ScienceSemiconductorsPhotoluminescenceEngineeringPhysics	1990	38

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