Carl Hemmingsson

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Carl Hemmingsson, Nguyên Tiên Són, Olof Kordina et al. · Journal of Applied Physics · 1997 · 317 citations

Semiconductors, Semiconductor Technology, Engineering +12

Negative-<i>U</i>centers in 4<i>H</i>silicon carbide

Carl Hemmingsson, Nguyên Tiên Són, J. Zhang et al. · Physical review. B, Condensed matter · 1998 · 163 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Evidence for Two Mg Related Acceptors in GaN

B. Monemar, Carl Hemmingsson, J. P. Bergman et al. · Physical Review Letters · 2009 · 122 citations

Physics, Applied Physics, Aluminum Gallium Nitride +6

Growth of thick GaN layers with hydride vapour phase epitaxy

B. Ḿonemar, Henrik Larsson, Carl Hemmingsson et al. · Journal of Crystal Growth · 2005 · 58 citations

Materials Engineering, Materials Science, Engineering +5

Capture cross sections of electron irradiation induced defects in 6H–SiC

Carl Hemmingsson, Nguyên Tiên Són, Olof Kordina et al. · Journal of Applied Physics · 1998 · 57 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +12