Carl Hemmingsson - Concepedia

Author

Carl Hemmingsson

Also Known As

C G Hemmingsson, C Hemmingsson, C. G Hemmingsson, C. G. Hemmingsson, C. Hemmingsson, C.G. Hemmingsson, Carl G. Hemmingsson, Carl Hemmingsson, Hemmingsson, C.

101

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Linköping University Meijo University Japan Atomic Energy Agency Furukawa Electric (Japan)Nagoya University

About

Carl Hemmingsson is an author at Linköping University specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	44	1.6K
2	Applied Physics	24	45	1.8K
3	Electrical Engineering	17	24	758
4	Natural Sciences	4	4	114
5	Chemistry	2	2	90

Carl Hemmingsson

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Deep level defects in electron-irradiated 4H SiC epitaxial layers Carl Hemmingsson, Nguyên Tiên Són, Olof Kordina, Journal of Applied Physics SemiconductorsSemiconductor TechnologyEngineeringPhysicsCrystalline Defects	1997	317
Negative-<i>U</i>centers in 4<i>H</i>silicon carbide Carl Hemmingsson, Nguyên Tiên Són, J. Zhang, Physical review. B, Condensed matter Materials ScienceMaterials EngineeringElectrical EngineeringNegative-u CentersEngineering	1998	163
Evidence for Two Mg Related Acceptors in GaN B. Monemar, Carl Hemmingsson, J. P. Bergman, Physical Review Letters PhysicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceStrain Broadening	2009	122
Growth of thick GaN layers with hydride vapour phase epitaxy B. Ḿonemar, Henrik Larsson, Carl Hemmingsson, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringThick Gan LayersApplied Physics	2005	58
Capture cross sections of electron irradiation induced defects in 6H–SiC Carl Hemmingsson, Nguyên Tiên Són, Olof Kordina, Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceDeep LevelsCapacitance Transient	1998	57
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D. Gogova, A. Kasic, Henrik Larsson, Journal of Applied Physics Materials ScienceMaterials EngineeringSemiconductorsGan TemplateCrystalline Quality	2004	54
Properties of the main Mg-related acceptors in GaN from optical and structural studies B. Ḿonemar, Carl Hemmingsson, J. P. Bergman, Journal of Applied Physics Wide-bandgap SemiconductorVarious Luminescence FeaturesOptical MaterialsEngineeringChemistry	2014	54
Emission properties of Ga2O3 nano-flakes: effect of excitation density Mattias Forsberg, M. A. Kaliteevski, Carl Hemmingsson Scientific Reports	2017	54
Identification of the gallium vacancy–oxygen pair defect in GaN Nguyên Tiên Són, Carl Hemmingsson, T. Paskova, Physical Review B Materials ScienceWide-bandgap SemiconductorEngineeringCation VacanciesPhysics	2009	49
Effect of silicon and oxygen doping on donor bound excitons in bulk GaN S. Khromov, Carl Hemmingsson, Lars Hultman, Physical Review B Wide-bandgap SemiconductorEngineeringBulk GanOptoelectronic DevicesSemiconductors	2011	48

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