J. Zhang

Negative-<i>U</i>centers in 4<i>H</i>silicon carbide

Carl Hemmingsson, Nguyên Tiên Són, J. Zhang et al. · Physical review. B, Condensed matter · 1998 · 163 citations

Materials Science, Materials Engineering, Electrical Engineering +13

High temperature CVD growth of SiC

A. Ellison, J. Zhang, Jeffrey M. Peterson et al. · Materials Science and Engineering B · 1999 · 87 citations

Materials Engineering, Engineering, Applied Physics +2

Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor

J. Zhang, A. Ellison, Margareta K. Linnarsson et al. · Journal of Crystal Growth · 2001 · 41 citations

Nuclear Ceramic, Chimney Cvd Reactor, Engineering +2

Self-diffusion of C12 and C13 in intrinsic 4H–SiC

Margareta K. Linnarsson, Martin S. Janson, J. Zhang et al. · Journal of Applied Physics · 2004 · 16 citations

Semiconductor Technology, Engineering, Strict T Evolution +10

Growth characteristics of SiC in a hot-wall CVD reactor with rotation

J. Zhang, Urban Forsberg, M. Isacson et al. · Journal of Crystal Growth · 2002 · 14 citations

Growth Characteristics, Electrical Engineering, Engineering +4