Urban Forsberg

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, E.Ö. Sveinbjörnsson et al. · Journal of Applied Physics · 2010 · 100 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Jr‐Tai Chen, Urban Forsberg, Erik Janzén · Applied Physics Letters · 2013 · 95 citations · Full text

Materials Engineering, Semiconductors, Electrical Engineering +13

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Sebastian Gustafsson, Jr-Tai Chen, Johan Bergsten et al. · IEEE Transactions on Electron Devices · 2015 · 81 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Nitrogen doping of epitaxial silicon carbide

Urban Forsberg, Örjan Danielsson, Anne Henry et al. · Journal of Crystal Growth · 2002 · 79 citations

Materials Science, Materials Engineering, Engineering +4

Creep and LCF Behaviors of Newly Developed Advanced Heat Resistant Austenitic Stainless Steel for A-USC

Guocai Chai, Magnus Boström, Magnus Olaison et al. · Procedia Engineering · 2013 · 79 citations · Full text