Jr‐Tai Chen

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Jr‐Tai Chen, Urban Forsberg, Erik Janzén · Applied Physics Letters · 2013 · 95 citations · Full text

Engineering, Materials Engineering, Materials Science +17

A GaN–SiC hybrid material for high-frequency and power electronics

Jr‐Tai Chen, Johan Bergsten, Jun Lu et al. · Applied Physics Letters · 2018 · 94 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

Johan Bergsten, Mattias Thorsell, David Adolph et al. · IEEE Transactions on Electron Devices · 2018 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

Ding-Yuan Chen, Anna Malmros, Mattias Thorsell et al. · IEEE Electron Device Letters · 2020 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Jr‐Tai Chen, Ingemar Persson, Daniel Nilsson et al. · Applied Physics Letters · 2015 · 63 citations · Full text

Engineering, Materials Engineering, Materials Science +17