Anna Malmros - Concepedia

Author

Anna Malmros

Chalmers University of Technology ORCID

Also Known As

A Malmros, A. Malmros, Anna Malmros

Publications

566

Citations

H-Index

Concepts

All Affiliations

Chalmers University of Technology Thales (France)Linköping University

About

Anna Malmros is an author at Chalmers University of Technology specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	432
2	Applied Physics	11	12	432
3	Electrical Engineering	11	11	404
4	Materials Science	5	5	115
5	Materials Engineering	4	4	108

Anna Malmros

Publications

550

Citations

H-Index

Page 1

	Year	Citations
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz Joel Schleeh, G. Alestig, J. Halonen, IEEE Electron Device Letters Record Noise TemperatureSemiconductor TechnologyElectrical EngineeringEngineeringRf Semiconductor	2012	113
Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs Anna Malmros, H. Blanck, Niklas Rorsman Semiconductor Science and Technology	2011	93
Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors Ding-Yuan Chen, Anna Malmros, Mattias Thorsell, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringMicrowave PerformanceEngineering	2020	62
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier Anna Malmros, Piero Gamarra, Mattias Thorsell, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringGate LengthEngineering	2018	61
Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN<sub> <i>x</i> </sub> Grown by Low Pressure Chemical Vapor Deposition Tongde Huang, Anna Malmros, Johan Bergsten, IEEE Electron Device Letters Materials EngineeringSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2015	30
Evaluation of Thermal Versus Plasma-Assisted ALD Al<sub>2</sub>O<sub>3</sub> as Passivation for InAlN/AlN/GaN HEMTs Anna Malmros, Piero Gamarra, Marie‐Antoinette di Forte‐Poisson, IEEE Electron Device Letters Materials EngineeringSemiconductorsElectrical EngineeringMaterials ScienceEngineering	2015	29
Combined TiN- and TaN temperature compensated thin film resistors Anna Malmros, Kristoffer Andersson, Niklas Rorsman Thin Solid Films Materials EngineeringMaterials ScienceTan TemperatureEngineeringResistor	2011	28
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs Yen-Ku Lin, Johan Bergsten, Hector Leong, Semiconductor Science and Technology Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesGan Hemts	2018	26
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures Johan Bergsten, Anna Malmros, M. Tordjman, Semiconductor Science and Technology	2015	25
Effects of Surface Passivation and Deposition Methods on the 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors Thanh Ngoc Thi, Anna Malmros, Piero Gamarra, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringLow-frequency NoiseSemiconductor DeviceSemiconductors	2015	21

Page 1