Anna Malmros

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, G. Alestig, J. Halonen et al. · IEEE Electron Device Letters · 2012 · 113 citations · Full text

Record Noise Temperature, Semiconductor Technology, Electrical Engineering +12

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Anna Malmros, H. Blanck, Niklas Rorsman · Semiconductor Science and Technology · 2011 · 93 citations

Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

Ding-Yuan Chen, Anna Malmros, Mattias Thorsell et al. · IEEE Electron Device Letters · 2020 · 62 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

Anna Malmros, Piero Gamarra, Mattias Thorsell et al. · IEEE Transactions on Electron Devices · 2018 · 61 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +11

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN_<i>x</i> Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al. · IEEE Electron Device Letters · 2015 · 30 citations

Materials Engineering, Semiconductors, Electrical Engineering +13