Tongde Huang

Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD

Zhaojun Liu, Tongde Huang, Jun Ma et al. · IEEE Electron Device Letters · 2014 · 104 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +13

Optical properties of Er,Yb co-doped YAG transparent ceramics

Jun Zhou, Wenxin Zhang, Tongde Huang et al. · Ceramics International · 2010 · 59 citations

Materials Science, Optical Materials, Engineering +4

Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG

Tongde Huang, Xueliang Zhu, Ka Ming Wong et al. · IEEE Electron Device Letters · 2011 · 55 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +15

Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD

Tongde Huang, Xueliang Zhu, Kei May Lau · IEEE Electron Device Letters · 2012 · 52 citations

Regrown Source/drain, High-performance Enhancement-mode, Electrical Engineering +13

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

Zhaojun Liu, Jun Ma, Tongde Huang et al. · Applied Physics Letters · 2014 · 52 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +11