Xueliang Zhu

Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG

Tongde Huang, Xueliang Zhu, Ka Ming Wong et al. · IEEE Electron Device Letters · 2011 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD

Tongde Huang, Xueliang Zhu, Kei May Lau · IEEE Electron Device Letters · 2012 · 53 citations

Engineering, Electrical Engineering, Materials Science +9

Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

Jun Ma, Xueliang Zhu, Ka Ming Wong et al. · Journal of Crystal Growth · 2012 · 46 citations

Engineering, Electrical Engineering, Materials Science +14

Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE

Shuang Qu, Shuqiang Li, Yan Peng et al. · Journal of Alloys and Compounds · 2010 · 44 citations

Engineering, Materials Engineering, Materials Science +17

Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

Yunyan Zhang, Xueliang Zhu, Yian Yin et al. · IEEE Electron Device Letters · 2012 · 39 citations

Engineering, Electrical Engineering, Materials Science +17