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Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE

Materials EngineeringMaterials ScienceElectrical EngineeringAln BufferGrowth TemperatureEngineeringAluminium NitrideWide-bandgap SemiconductorApplied PhysicsAluminum Gallium NitrideGan Power DeviceGan Films