Piero Gamarra

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Yoan Bourlier, Muriel Bouttemy, O. Patard et al. · ECS Journal of Solid State Science and Technology · 2018 · 104 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

Anna Malmros, Piero Gamarra, Mattias Thorsell et al. · IEEE Transactions on Electron Devices · 2018 · 66 citations

Engineering, Electrical Engineering, Materials Science +14

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Arantxa Vilalta‐Clemente, G. Naresh‐Kumar, M. Nouf-Allehiani et al. · Acta Materialia · 2016 · 59 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Davide Bisi, Alessandro Chini, F. Soci et al. · IEEE Electron Device Letters · 2015 · 48 citations · Full text

Engineering, Electrical Engineering, Materials Science +17