F. Soci

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Alessandro Chini, F. Soci, Matteo Meneghini et al. · IEEE Transactions on Electron Devices · 2013 · 57 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Davide Bisi, Alessandro Chini, F. Soci et al. · IEEE Electron Device Letters · 2015 · 48 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Boost-converter-based solar harvester for low power applications

Alessandro Chini, F. Soci · Electronics Letters · 2010 · 27 citations · Full text

Engineering, Electrical Engineering, Power Electronics +15

Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs

Alessandro Chini, Valerio Di Lecce, F. Soci et al. · 2012 · 18 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Davide Bisi, Antonio Stocco, Isabella Rossetto et al. · Microelectronics Reliability · 2015 · 13 citations · Full text

Engineering, Electrical Engineering, Materials Science +13