Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Yoan Bourlier, Muriel Bouttemy, O. Patard, +6

ECS Journal of Solid State Science and Technology

Aluminium NitrideEngineeringChemistryInaln ReactivityIi-vi Semiconductor +17

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli, +13

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +10

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers

S. Piotrowicz, Z. Ouarch, E. Chartier, +9

2010 IEEE MTT-S International Microwave Symposium

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorAluminum Gallium Nitride +7

Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films

C. Duquenne, Pierre‐Yves Tessier, Marie‐Paule Besland, +5

Journal of Applied Physics

Aluminium NitrideThin Film PhysicsEngineeringThin Film Process TechnologyChemical Deposition +15

MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier, F. Sèmond, P. Lorenzini, +16

Journal of Crystal Growth

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor +6

State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

S. Piotrowicz, E. Morvan, R. Aubry, +19

Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorArt 58W +8

Deep traps analysis in AlGaN/GaN heterostructure transistors

W. Chikhaoui, Jean‐Marie Bluet, C. Bru‐Chevallier, +2

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Wide-bandgap SemiconductorElectrical EngineeringPulse Reverse BiasEngineeringPhysics +8

Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature

C. Duquenne, M. A. Djouadi, Pierre‐Yves Tessier, +5

Applied Physics Letters

Materials EngineeringMaterials ScienceAln FilmsAluminum NitrideEngineering +13

A new nonlinear HEMT model for AlGaN/GaN switch applications

Olivier Jardel, Guillaume Callet, C. Charbonniaud, +8

European Microwave Integrated Circuits Conference

Device ModelingElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride +9

High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, +6

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh Linearity Application +13