Concepedia

R. Aubry

RA

22

Publications

558

Citations

14

H-Index

2002

Active since

Affiliations

III V Lab(Current)

Centre National de la Recherche Scientifique

Thales (France)

Institut d'électronique de microélectronique et de nanotechnologie

United Monolithic Semiconductor (France)

R. Aubry is an author at III V Lab specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsNanoelectronicsMaterials EngineeringOptoelectronicsPower ElectronicsThin FilmsSurface Science

Publications per year

2002–2022

22

Publications

22

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Yoan Bourlier, Muriel Bouttemy, O. Patard et al. · ECS Journal of Solid State Science and Technology · 2018 · 92 citations · Full text

Aluminium Nitride, Engineering, Chemistry +19

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 58 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers

S. Piotrowicz, Z. Ouarch, E. Chartier et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films

C. Duquenne, Pierre‐Yves Tessier, Marie‐Paule Besland et al. · Journal of Applied Physics · 2008 · 36 citations

Aluminium Nitride, Thin Film Physics, Engineering +17

MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier, F. Sèmond, P. Lorenzini et al. · Journal of Crystal Growth · 2003 · 34 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

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