S. Piotrowicz

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Yoan Bourlier, Muriel Bouttemy, O. Patard et al. · ECS Journal of Solid State Science and Technology · 2018 · 104 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs

Séraphin Dieudonné Nsele, L. Escotte, Jean-Guy Tartarin et al. · IEEE Transactions on Electron Devices · 2013 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers

S. Piotrowicz, Z. Ouarch, E. Chartier et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

A new nonlinear HEMT model for AlGaN/GaN switch applications

Guillaume Callet, Jad Faraj, Olivier Jardel et al. · International Journal of Microwave and Wireless Technologies · 2010 · 35 citations

Engineering, Electrical Engineering, Materials Science +16