E. Chartier - Concepedia

Author

E. Chartier

Also Known As

André Campeau, Chartier, E., Chartier, Eric, E Chartier, E. Chartier, Eric Chartier, Even Loarer et Philippe Chartier, Michel Kuntz

Publications

725

Citations

H-Index

Concepts

All Affiliations

III V Lab Centre National de la Recherche Scientifique United Monolithic Semiconductor (France)Thales (France)XLIM

About

E. Chartier is an author at III V Lab specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	26	572
2	Electrical Engineering	16	26	572
3	Applied Physics	12	16	367
4	Materials Engineering	2	2	29
5	Materials Science	2	2	25

E. Chartier

Publications

588

Citations

H-Index

Page 1

	Year	Citations
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT R. Aubry, J. Jacquet, M. Oualli, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2016	58
First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT S.L. Delage, M.A. di Forte-Poisson, H. Blanck, Electronics Letters Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering	1991	52
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers S. Piotrowicz, Z. Ouarch, E. Chartier, 2010 IEEE MTT-S International Microwave Symposium Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorAluminum Gallium Nitride	2010	47
Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer O. Noblanc, C. Arnodo, C. Dua, Materials science forum Electrical EngineeringEngineeringRf SemiconductorElectronic EngineeringApplied Physics	2000	40
State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers S. Piotrowicz, E. Morvan, R. Aubry, Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorArt 58W	2008	33
Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs O. Noblanc, C. Arnodo, C. Dua, Materials Science and Engineering B Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorPower Device	1999	29
Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor R. Plana, J. Graffeuil, S.L. Delage, Electronics Letters Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied Physics	1992	24
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process Olivier Jardel, Guillaume Callet, Jérémy Dufraisse, International Journal of Microwave and Wireless Technologies Continuous WaveWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2011	21
Power GaInP/GaAs HBT MMICs S.L. Delage, D. Floriot, H. Blanck, Electrical EngineeringEngineeringRf SemiconductorHbt TopologyHigh-frequency Device	1994	20
A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements D. Siriex, O. Noblanc, D. Barataud, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSic DevicesEngineeringSemiconductor Device	1999	19

Page 1