E. Chartier

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 58 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT

S.L. Delage, M.A. di Forte-Poisson, H. Blanck et al. · Electronics Letters · 1991 · 52 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers

S. Piotrowicz, Z. Ouarch, E. Chartier et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer

O. Noblanc, C. Arnodo, C. Dua et al. · Materials science forum · 2000 · 40 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

S. Piotrowicz, E. Morvan, R. Aubry et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 2008 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10