M.A. di Forte-Poisson

Surface potential of n- and p-type GaN measured by Kelvin force microscopy

S. Barbet, Raphaël Aubry, M.A. di Forte-Poisson et al. · Applied Physics Letters · 2008 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC

B. Pécz, L. E. Toth, M.A. di Forte-Poisson et al. · Applied Surface Science · 2003 · 68 citations

Engineering, Materials Engineering, Materials Science +14

Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Arantxa Vilalta‐Clemente, G. Naresh‐Kumar, M. Nouf-Allehiani et al. · Acta Materialia · 2016 · 59 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition

M.A. di Forte-Poisson, C. Brylinski, J.P. Duchemin · Applied Physics Letters · 1985 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

A. Sasikumar, Aaron R. Arehart, Sara Martin-Horcajo et al. · Applied Physics Letters · 2013 · 54 citations · Full text

Engineering, Electrical Engineering, Materials Science +17