C. Brylinski

Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

D. Defives, O. Noblanc, C. Dua et al. · IEEE Transactions on Electron Devices · 1999 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

Nickel based ohmic contacts on SiC

Ts. Marinova, A. Kakanakova‐Georgieva, V. Krastev et al. · Materials Science and Engineering B · 1997 · 115 citations

Engineering, Electrical Engineering, Materials Science +12

Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition

M.A. di Forte-Poisson, C. Brylinski, J.P. Duchemin · Applied Physics Letters · 1985 · 57 citations

Engineering, Materials Engineering, Materials Science +17

First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT

S.L. Delage, M.A. di Forte-Poisson, H. Blanck et al. · Electronics Letters · 1991 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity

N. Sghaier, Jean‐Marie Bluet, A. Souifi et al. · IEEE Transactions on Electron Devices · 2003 · 47 citations

Engineering, Electrical Engineering, Materials Science +17