Applied Physics Letters · 1985 · 57 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDopingEpitaxial GrowthSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsCarrier ConcentrationDoping In Thin FilmsHall EffectHall Effect MeasurementsIndium PhosphideLow-pressure Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionPhotoluminescence
Low pressure metalorganic chemical vapor epitaxial growth and characterization of high purity and Si-doped indium phosphide on semi-insulating (100) InP:Fe substrate are presented in this letter. Electrical characteristics of the layers were determined from Hall measurements. Hall mobilities as high as 145 000 cm2 V−1 s−1 at 77 K have been achieved on high purity layers with net donnor density ND−NA≂2×1014 cm−3. High resolution photoluminescence measurements were performed with the as-grown layers at temperatures down to 1.7 K. Carrier concentration and the resulting mobility of intentionally Si-doped low pressure metalorganic chemical vapor deposition grown InP layers were also studied.
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