Concepedia

L. Jastrzȩbski

LJ

53

Publications

2.3K

Citations

25

H-Index

1974

Active since

Affiliations

RCA (United States)(Current)

Massachusetts Institute of Technology

University of South Florida

Princeton University

L. Jastrzȩbski is an author at RCA (United States) specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMaterial ScienceMicroelectronicsSemiconductorsElectronic PackagingPhysicsMaterials EngineeringOptoelectronics

Publications per year

1974–2011

53

Publications

53

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1980 · 332 citations

Semiconductors, N-type Inp, Optical Materials +14

Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio

W. Walukiewicz, L. Lagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1979 · 249 citations

Semiconductors, Room Temperature, Electrical Engineering +10

Application of scanning electron microscopy to determination of surface recombination velocity: GaAs

L. Jastrzȩbski, J. Łagowski, H. C. Gatos · Applied Physics Letters · 1975 · 174 citations

Engineering, Microscopy, Bulk Minority-carrier Lifetime +16

SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—Review

L. Jastrzȩbski · Journal of Crystal Growth · 1983 · 110 citations

Materials Engineering, Engineering, Applied Physics +3

Minority-carrier mobility in <i>p</i>-type GaAs

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1979 · 85 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Rows per page

1–5 of 53