J. Łagowski

Electron mobility in modulation-doped heterostructures

W. Walukiewicz, Harry E. Ruda, J. Łagowski et al. · Physical review. B, Condensed matter · 1984 · 444 citations

Materials Science, Wide-bandgap Semiconductor, Categoryquantum Electronics +13

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1980 · 332 citations

Semiconductors, N-type Inp, Optical Materials +14

Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

J. Łagowski, H. C. Gatos, J. M. Parsey et al. · Applied Physics Letters · 1982 · 279 citations

Wide-bandgap Semiconductor, Engineering, 0.82-Ev Electron Trap +16

Intracenter transitions in the dominant deep level (EL2) in GaAs

M. Kamińska, Marek Skowroński, J. Łagowski et al. · Applied Physics Letters · 1983 · 196 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Application of scanning electron microscopy to determination of surface recombination velocity: GaAs

L. Jastrzȩbski, J. Łagowski, H. C. Gatos · Applied Physics Letters · 1975 · 174 citations

Engineering, Microscopy, Bulk Minority-carrier Lifetime +16