Statistics
Publications
114
Citations
5.6K
H-Index
40
Active since
1971
Affiliations
J. Łagowski is an author at Massachusetts Institute of Technology specializing in materials science, semiconductor materials, and semiconductor physics.
Publications per year
1971–2011
114
114
Electron mobility in modulation-doped heterostructures
W. Walukiewicz, Harry E. Ruda, J. Łagowski et al. · Physical review. B, Condensed matter · 1984 · 446 citations
Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors
J. Łagowski, H. C. Gatos, J. M. Parsey et al. · Applied Physics Letters · 1982 · 279 citations
Intracenter transitions in the dominant deep level (EL2) in GaAs
M. Kamińska, Marek Skowroński, J. Łagowski et al. · Applied Physics Letters · 1983 · 196 citations
1–5 of 114