J. M. Parsey

Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

J. Łagowski, H. C. Gatos, J. M. Parsey et al. · Applied Physics Letters · 1982 · 279 citations

Natural Sciences, Materials Science, Physics +17

Intracenter transitions in the dominant deep level (EL2) in GaAs

M. Kamińska, Marek Skowroński, J. Łagowski et al. · Applied Physics Letters · 1983 · 196 citations

Natural Sciences, Physics, Condensed Matter Physics +15

Passivation of the dominant deep level (EL2) in GaAs by hydrogen

J. Łagowski, M. Kamińska, J. M. Parsey et al. · Applied Physics Letters · 1982 · 111 citations

Natural Sciences, Materials Science, Physics +17

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Engineering, Electrical Engineering, Materials Engineering +17

Czochralski growth and characterization of GaSb

W. A. Sunder, R. L. Barns, T. Y. Kometani et al. · Journal of Crystal Growth · 1986 · 85 citations

Natural Sciences, Materials Engineering, Materials Science +11