M. Kamińska

Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

M. Kamińska, Z. Liliental‐Weber, E. R. Weber et al. · Applied Physics Letters · 1989 · 415 citations

Materials Science, Semiconductors, Electrical Engineering +15

Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

J. Łagowski, H. C. Gatos, J. M. Parsey et al. · Applied Physics Letters · 1982 · 279 citations

Wide-bandgap Semiconductor, Engineering, 0.82-Ev Electron Trap +16

Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures

M. Kamińska, E. R. Weber, Z. Liliental‐Weber et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 207 citations

Engineering, Semiconductors, Molecular-beam Epitaxy +16

Intracenter transitions in the dominant deep level (EL2) in GaAs

M. Kamińska, Marek Skowroński, J. Łagowski et al. · Applied Physics Letters · 1983 · 196 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Magnetic and optical properties of GaMnN magnetic semiconductor

Marcin Zając, R. Doradziński, J. Gosk et al. · Applied Physics Letters · 2001 · 188 citations

Magnetic Properties, Engineering, Magnetic Resonance +17