Hall Effect

The Hall Effect is a physical phenomenon in which a transverse voltage difference emerges across a conductor or semiconductor when an electric current flows through it in the presence of a perpendicular magnetic field, arising due to the Lorentz force deflecting charge carriers to opposite sides of the material.

12K

Publications

765.7K

Citations

30.3K

Authors

3.6K

Institutions

Publications per year

2017–2026

3K

Authors

30.3K

  1. NN
    Naoto Nagaosa

    The University of Tokyo, Japan

    71 publications · 13.9K citations

    50

    h-index

  2. YT
    Yoshinori Tokura

    The University of Tokyo, Japan

    55 publications · 8.5K citations

    39

    h-index

  3. AH
    A. H. MacDonald

    The University of Texas at Austin, United States

    45 publications · 7.3K citations

    34

    h-index

  4. KW
    Kenji Watanabe

    National Institute for Materials Science, Japan

    39 publications · 5K citations

    30

    h-index

  5. TT
    Takashi Taniguchi

    National Institute for Materials Science, Japan

    40 publications · 5K citations

    30

    h-index

1–5 of 30.3K

Venues

  1. Physical Review Letters

    PRL · 685 publications · 128.2K citations

    167

    h-index

  2. Applied Physics Letters

    979 publications · 58.6K citations

    113

    h-index

  3. Journal of Applied Physics

    983 publications · 43.8K citations

    92

    h-index

  4. Physical Review B

    PRB · 512 publications · 33.3K citations

    91

    h-index

  5. Physical review. B, Condensed matter

    PRB · 512 publications · 37.6K citations

    87

    h-index

1–5