G. Dorda - Concepedia

Author

G. Dorda

Siemens (Germany)

Also Known As

Dorda G, Dorda, Gerhard, G Dorda, G. Dorda, G.E. Dorda, Gerhard Dorda, Gerhard E. Dorda

Publications

8.9K

Citations

H-Index

Concepts

All Affiliations

Siemens (Germany)University of Würzburg Technical University of Munich

About

G. Dorda is an author at Siemens (Germany) specializing in physics, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	35	8.3K
2	Applied Physics	22	35	8.3K
3	Electrical Engineering	15	19	7.8K
4	Natural Sciences	4	4	193
5	Chemistry	1	1	10

G. Dorda

Publications

8.6K

Citations

H-Index

Page 1

	Year	Citations
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance K. von Klitzing, G. Dorda, M. Pepper Physical Review Letters EngineeringSemiconductor DeviceNanoelectronicsElectronic EngineeringQuantum Materials	1980	6.8K
Hot-electron and hole-emission effects in short n-channel MOSFET's K.R. Hofmann, C. Werner, W. Weber, IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringPhysicsNanoelectronics	1985	315
Cyclotron resonance of electrons in surface space-charge layers on silicon G. Abstreiter, J. P. Kotthaus, J. F. Koch, Physical review. B, Solid state	1976	186
Resonance Spectroscopy of Electronic Levels in a Surface Accumulation Layer Avid Kamgar, P. Kneschaurek, G. Dorda, Physical Review Letters EngineeringElectronic Excited StateAccumulation LayerPhysicsElectronic Levels	1974	113
Piezoresistance in Quantized Conduction Bands in Silicon Inversion Layers G. Dorda Journal of Applied Physics Surface CharacterizationElectrical EngineeringEngineeringPhysicsNanoelectronics	1971	113
Surface quantum oscillations in (110) and (111) n-type silicon inversion layers Th. Neugebauer, K. von Klitzing, G. Landwehr, Solid State Communications Surface Quantum OscillationsEngineeringPhysicsQuantum DeviceSurface Science	1975	84
Generation of interface states by hot hole injection in MOSFET's H. Gesch, Jean‐Pierre Leburton, G. Dorda IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1982	83
Degradation of n-MOS-Transistors after pulsed stress W. Weber, C. Werner, G. Dorda IEEE Electron Device Letters Electrical EngineeringSemiconductor DeviceEngineeringPulsed StressComparable Static Stress	1984	67
Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon K. von Klitzing, G. Landwehr, G. Dorda Solid State Communications Electrical EngineeringEngineeringPhysicsCondensed Matter PhysicsP-type Inversion Layers	1974	61
Many-valley interactions in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type silicon inversion layers G. Dorda, I. Eisele, H. Gesch Physical review. B, Condensed matter EngineeringSilicon On InsulatorCharge TransportNanoelectronicsQuantum Materials	1978	45

Page 1