K.R. Hofmann

Hot-electron and hole-emission effects in short n-channel MOSFET's

K.R. Hofmann, C. Werner, W. Weber et al. · IEEE Transactions on Electron Devices · 1985 · 315 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Electron transport in strained Si layers on Si1−<i>x</i>Ge<i>x</i> substrates

Th. Vogelsang, K.R. Hofmann · Applied Physics Letters · 1993 · 150 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Time-differential sense amplifier for sub-80mV bitline voltage embedded STT-MRAM in 40nm CMOS

Mihail Jefremow, Thomas Kern, Wolf Allers et al. · 2013 · 63 citations

Magnetism, Spintronics, Non-volatile Memory +13

The Electron Drift Instrument for MMS

R. B. Torbert, H. Vaith, M. Granoff et al. · Space Science Reviews · 2015 · 56 citations · Full text

Experimental Method, Engineering, Physics +14

Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on Si

D. Reinking, M. Kammler, M. Horn‐von Hoegen et al. · Applied Physics Letters · 1997 · 55 citations

Wide-bandgap Semiconductor, Engineering, Surfactant Segregation +17