A. Kakanakova‐Georgieva

Defects in hexagonal-AlN sheets by first-principles calculations

Edward Ferraz de Almeida, F. de Brito Mota, C.M.C. de Castilho et al. · The European Physical Journal B · 2012 · 117 citations · Full text

Nickel based ohmic contacts on SiC

Ts. Marinova, A. Kakanakova‐Georgieva, V. Krastev et al. · Materials Science and Engineering B · 1997 · 115 citations

Materials Science, Engineering, Applied Physics +3

Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

R. R. Q. Freitas, Roberto Rivelino, F. de Brito Mota et al. · The Journal of Physical Chemistry C · 2015 · 114 citations · Full text

Van der Waals stacks of few-layer h-AlN with graphene: an<i>ab initio</i>study of structural, interaction and electronic properties

Renato Batista dos Santos, F. de Brito Mota, Roberto Rivelino et al. · Nanotechnology · 2016 · 101 citations · Full text

Nanosheet, Engineering, Graphite-like Hexagonal Aln +17

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, E.Ö. Sveinbjörnsson et al. · Journal of Applied Physics · 2010 · 100 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14