Fredrik Allerstam

β-Gallium oxide power electronics

Andrew J. Green, James S. Speck, Grace Xing et al. · APL Materials · 2022 · 506 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, E.Ö. Sveinbjörnsson et al. · Journal of Applied Physics · 2010 · 102 citations · Full text

Engineering, Materials Engineering, Materials Science +17

A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation

Fredrik Allerstam, Halldór Ólafsson, G. Gudjónsson et al. · Journal of Applied Physics · 2007 · 76 citations

Engineering, Materials Engineering, Materials Science +17

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjón Gudjónsson, Halldór Ólafsson, Fredrik Allerstam et al. · IEEE Electron Device Letters · 2005 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

1200-V 5.2-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain

Hyung‐Seok Lee, Martin Domeij, Carl‐Mikael Zetterling et al. · IEEE Electron Device Letters · 2007 · 54 citations

Engineering, Electrical Engineering, Materials Science +16