Martin Fagerlind

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, E.Ö. Sveinbjörnsson et al. · Journal of Applied Physics · 2010 · 100 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Mattias Südow, Martin Fagerlind, Mattias Thorsell et al. · IEEE Transactions on Microwave Theory and Techniques · 2008 · 60 citations

Electrical Engineering, Engineering, Rf Semiconductor +8

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al. · IEEE Transactions on Microwave Theory and Techniques · 2008 · 57 citations

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Materials +8

An X-Band AlGaN/GaN MMIC Receiver Front-End

Mattias Thorsell, Martin Fagerlind, Kristoffer Andersson et al. · IEEE Microwave and Wireless Components Letters · 2009 · 51 citations · Full text

Electrical Engineering, Engineering, Rf Semiconductor +9

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Mattias Südow, Kristoffer Andersson, Martin Fagerlind et al. · IEEE Transactions on Microwave Theory and Techniques · 2008 · 30 citations

Electrical Engineering, Linear X-band, Engineering +10