E.Ö. Sveinbjörnsson

Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

Eckhard Pippel, Jörg Woltersdorf, Halldór Ólafsson et al. · Journal of Applied Physics · 2004 · 129 citations

Engineering, Materials Engineering, Materials Science +17

Room temperature electroluminescence from dislocation-rich silicon

E.Ö. Sveinbjörnsson, Jörg Weber · Applied Physics Letters · 1996 · 103 citations

Engineering, Electrical Engineering, Materials Science +16

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, E.Ö. Sveinbjörnsson et al. · Journal of Applied Physics · 2010 · 102 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, I.N. Osiyuk, I.P. Tyagulski et al. · Solid-State Electronics · 2005 · 82 citations

Engineering, Materials Engineering, Materials Science +16

Electrical properties of platinum-hydrogen complexes in silicon

J.-U. Sachse, E.Ö. Sveinbjörnsson, W. Jost et al. · Physical review. B, Condensed matter · 1997 · 77 citations

Natural Sciences, Materials Science, Physics +17