E.Ö. Sveinbjörnsson

Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

Eckhard Pippel, Jörg Woltersdorf, Halldór Ólafsson et al. · Journal of Applied Physics · 2004 · 127 citations

Materials Science, Near-interface Traps, Electrical Engineering +15

Room temperature electroluminescence from dislocation-rich silicon

E.Ö. Sveinbjörnsson, Jörg Weber · Applied Physics Letters · 1996 · 103 citations

Room Temperature Electroluminescence, Optical Materials, Engineering +17

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, E.Ö. Sveinbjörnsson et al. · Journal of Applied Physics · 2010 · 100 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, I.N. Osiyuk, I.P. Tyagulski et al. · Solid-State Electronics · 2005 · 81 citations

Materials Engineering, Materials Science, Electrical Engineering +5

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

Johan Bergsten, Mattias Thorsell, David Adolph et al. · IEEE Transactions on Electron Devices · 2018 · 77 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14