Concepedia

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, I.N. Osiyuk, I.P. Tyagulski, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson

Solid-State Electronics · 2005 · 82 citations · 23 references

DOI

Concepts

References

23

MOS (Metal Oxide Semiconductor) Physics and Technology

K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

, , +12

Intrinsic SiC/SiO2 Interface States

V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 643 citations

, , +17

Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface

C. Önneby, C. G. Pantano · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 286 citations

, , +17

Spectroscopy of traps by fractional glow technique

H. Gobrecht, Dieter Hofmann · Journal of Physics and Chemistry of Solids · 1966 · 274 citations

, , +10

Effects of nitridation in gate oxides grown on 4H-SiC

Philippe Jamet, Sima Dimitrijev, Philip Tanner · Journal of Applied Physics · 2001 · 270 citations

, , +17