H.Ö. Ólafsson

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, I.N. Osiyuk, I.P. Tyagulski et al. · Solid-State Electronics · 2005 · 81 citations

Materials Engineering, Materials Science, Electrical Engineering +5

High Channel Mobility 4H-SiC MOSFETs

E.Ö. Sveinbjörnsson, Gudjón Gudjónsson, Fredrik Allerstam et al. · Materials science forum · 2006 · 22 citations

Materials Science, Sintered Alumina, Electrical Engineering +11

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Fredrik Allerstam, Gudjón Gudjónsson, H.Ö. Ólafsson et al. · Semiconductor Science and Technology · 2007 · 22 citations

Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

E.Ö. Sveinbjörnsson, Fredrik Allerstam, H.Ö. Ólafsson et al. · Materials science forum · 2007 · 19 citations

Engineering, Oxidation Resistance, Sodium Enhanced Oxidation +16

New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, Tamara Rudenko et al. · Materials science forum · 2002 · 11 citations

Materials Science, Engineering, Interfacial Oxide Traps +7