I.N. Osiyuk

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, I.N. Osiyuk, I.P. Tyagulski et al. · Solid-State Electronics · 2005 · 81 citations

Materials Engineering, Materials Science, Electrical Engineering +5

Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

A. N. Nazarov, Jiaming Sun, W. Skorupa et al. · Applied Physics Letters · 2005 · 65 citations

Engineering, Optoelectronic Devices, Chemistry +18

Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

A. N. Nazarov, T. Gebel, L. Rebohle et al. · Journal of Applied Physics · 2003 · 32 citations

Al Electrode, Engineering, Vacuum Device +21

Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions

T. Gebel, L. Rebohle, W. Skorupa et al. · Applied Physics Letters · 2002 · 23 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

Halldór Ólafsson, E.Ö. Sveinbjörnsson, Tamara Rudenko et al. · Applied Physics Letters · 2001 · 21 citations

Semiconductors, Negative Oxide Charge, Electrical Engineering +13