I.P. Tyagulski

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Tamara Rudenko, I.N. Osiyuk, I.P. Tyagulski et al. · Solid-State Electronics · 2005 · 82 citations

Engineering, Materials Engineering, Materials Science +16

Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

Halldór Ólafsson, E.Ö. Sveinbjörnsson, Tamara Rudenko et al. · Applied Physics Letters · 2001 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs

I.P. Tyagulski, Y. V. Gomeniuk, I.N. Osiyuk · Microelectronics Reliability · 2000 · 15 citations

Engineering, Computer Engineering, Electrical Engineering +14

Thermally stimulated field emission of charge from traps in the transition layer of SiSiO2 structures

Y. V. Gomeniuk, R.N. Litovski, I.N. Osiyuk et al. · Applied Surface Science · 1992 · 13 citations

Natural Sciences, Materials Science, Physics +13

Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors

I.P. Tyagulski, Y. V. Gomeniuk, I.N. Osiyuk · Microelectronics Reliability · 2000 · 12 citations

Engineering, Electrical Engineering, Materials Science +16