Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors

Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs

J.-P. Colinge · IEEE Transactions on Electron Devices · 1990 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures

Antonio Rotondaro, Ulf Magnusson, Cor Claeys et al. · IEEE Transactions on Electron Devices · 1993 · 24 citations

Engineering, Electrical Engineering, Physics +17

Investigation of traps in the transition region of SiSiO2 structures at cryogenic temperatures

T. N. Sytenko, Vladislav I. Zimenko, O. V. Snitko · physica status solidi (a) · 1982 · 19 citations

Natural Sciences, Materials Science, Physics +16

Thermally stimulated field emission of charge from traps in the transition layer of SiSiO2 structures

Y. V. Gomeniuk, R.N. Litovski, I.N. Osiyuk et al. · Applied Surface Science · 1992 · 13 citations

Natural Sciences, Materials Science, Physics +13

Individual interface traps at the Si?SiO2 interface

H. H. Mueller, Martin Schulz · Journal of Materials Science Materials in Electronics · 1995 · 13 citations

Engineering, Materials Engineering, Materials Science +14