Antonio Rotondaro

Application of HfSiON as a gate dielectric material

M. R. Visokay, James J. Chambers, Antonio Rotondaro et al. · Applied Physics Letters · 2002 · 377 citations

Engineering, Standard Metal–oxide–semiconductor Flow, Thin Film Process Technology +17

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

P.R. Chidambaram, B. Smith, Lindsey Hall et al. · 2004 · 89 citations

Device Modeling, Electrical Engineering, Nm Gate Length +12

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

Amitava Chatterjee, R. A. Chapman, K. Joyner et al. · 2002 · 71 citations

Electrical Engineering, Engineering, Nanoelectronics +8

Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

B. C. Hendrix, A. S. Borovik, Chen Xu et al. · Applied Physics Letters · 2002 · 65 citations

Engineering, Hafnium Silicate, Hf1−xsixo2 Films +16

The kink-related excess low-frequency noise in silicon-on-insulator MOST's

Eddy Simoen, Ulf Magnusson, Antonio Rotondaro · IEEE Transactions on Electron Devices · 1994 · 65 citations

Device Modeling, Electrical Engineering, Semiconductor Device +15